Call For Paper Volume:4 Issue:10 Oct'2017 |

Fpga Implementation of Low Power Sram Based Processor in 8t Using Hetts

Publication Date : 30/11/2014



Author(s) :

Preethi.C.S , V.M. Senthilkumar.


Volume/Issue :
Volume 1
,
Issue 5
(11 - 2014)



Abstract :

In MOSFETs lower limit sub threshold swing (60mv/decade) restricts the low power operation. Low voltage operation is enabled by low Vth while maintaining performance. Hence steep sub threshold slopes provide power-efficient operation without any loss of performance. To obtain sub threshold swings of less than 30mV/decade with large ON current, Si/SiGe heterojunction tunneling transistor uses gate controlled modulation. To overcome the impact of HETT characteristics on SRAM, seven transistors HETT based SRAM design is introduced. Compared to CMOS this new 8T HETT SRAM achieves reduction in leakage power.


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Fpga Implementation of Low Power Sram Based Processor in 8t Using Hetts

December 4, 2014