Call For Paper Volume:4 Issue:8 Aug'2017 |

CMOS-Electromechanical Systems Microsensor Resonator with High Q-Factor at Low Voltage

Publication Date : 05/01/2016



Author(s) :

S.THENAPPAN , N.PORUTCHELVAM.


Volume/Issue :
Volume 3
,
Issue 1
(01 - 2016)



Abstract :

The paper presents a novel resonant-microsensor platform for chemical and biological sensing applications in gaseous and liquid environment.We report a thermally driven and piezoresistively sensed CMOS-microelectromechanical systems (MEMS) resonator with quality factor Q >15 000 and stopband rejection of 15 dB under CMOS-compatible bias voltage. Tha basic requirement of CMOS under the influence of this bias voltage. In addition, the combination of the bulk-mode resonator design and high- Q SiO2/polysilicon structural material leads to resonator Q >15 000, a key index for low-phase-noise oscillators and low-insertion-loss filters. The resonator with a center frequency at 7.1 MHz was fabricated using a standard 0.85 µm 3-poly-7-metal CMOS process, featuring low cost, batch production, fast turnaround time, easy prototyping, and MEMS/IC integration. To resolve the feedthrough issue often seen in conventional thermal-piezoresistive resonators: 1) separation of the heater and piezoresistor is first adopted because of the routing flexibility of the structural configuration offered by CMOS back-end-of-line materials and 5) fully differential measurement scheme is then applied to the proposed device, both of which enable a low-feedthrough level with 85-dB improvement as compared with its single-ended counterpart.


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CMOS-Electromechanical Systems Microsensor Resonator with High Q-Factor at Low Voltage

January 4, 2016